Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-04-04
2006-04-04
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S639000, C438S700000, C438S702000, C438S719000, C438S667000, C438S695000, C216S013000, C216S017000, C216S019000, C029S846000, C029S847000, C427S096400, C427S097100, C427S099300
Reexamination Certificate
active
07022609
ABSTRACT:
A manufacturing method of a semiconductor substrate provided with a through hole electrode is proposed. In accordance with the methods, it is possible to effectively form a through hole electrode in a semiconductor substrate in which a device and a wiring pattern have been already fabricated. This manufacturing method includes the steps of forming a first silicon oxide film12on a principal surface of the semiconductor substrate11, forming a small hole13through the semiconductor substrate11from the opposite the step to reach to the first silicon oxide film12, covering the inside of the small hole13with the second silicon oxide film14, forming a first thin metal film15and a second thin metal film16on the first silicon oxide film12, partially removing the first silicon oxide film12corresponding to the end of the small hole13, and filling the small hole13with the conductive material to form a through hole electrode17.
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Isokawa Toshihiko
Katashiro Masahiro
Matsumoto Kazuya
Miyajima Hiroshi
Suemasu Tatsuo
Fujikura Ltd.
George Patricia
Norton Nadine G.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Olympus Optical Co,. Ltd.
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