Manufacturing method of a semiconductor device with a silicide l

Details Manufacturing method of a semiconductor device with a silicide l Manufacturing method of a semiconductor device with a silicide l

1997-08-15

1999-09-07

Niebling, John F.

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438528, 438655, 438682, H01L 21425

Patent

active

059500980

ABSTRACT:
To form a silicide layer excellent in flatness, uniform in film thickness, and less in junction leak, by destroying the natural oxide film which adversely affects a formation of silicide layer of cobalt or nickel. A cobalt layer (7) is formed in a film thickness of 20 nm or less on an electrode layer (4A) of a gate electrode (4) and on source/drain diffusion layers (1, 2), and a nitrogen (8) is injected by the ion implantation at a density of about 1E15/cm.sup.3 with an injection energy of 10 keV or more. At this time, the nitrogens (8) destroy the natural oxide film existing in the interface of the cobalt layer (7) and electrode layer (4A), and in the interface of the cobalt layer (7) and the source/drain diffusion layers (1, 2), and distribute deeply into the electrode layer (4A) and the source/drain diffusion layers (1, 2). Later, by a silicide forming reaction of cobalt, a silicide layer (6) is formed. Since the natural oxide film does not exist, the silicide forming reaction proceeds uniformly. Instead of the nitrogen (8), fluorine or silicon may be also used.

REFERENCES:
patent: 4640004 (1987-02-01), Thomas et al.
patent: 4793896 (1988-12-01), Douglas
patent: 4829363 (1989-05-01), Thomas et al.

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