Manufacturing method of a semiconductor device with a metal...

Details Manufacturing method of a semiconductor device with a metal... Manufacturing method of a semiconductor device with a metal...

2006-09-12

2006-09-12

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S508000

Reexamination Certificate

active

07105438

ABSTRACT:
In a manufacturing method of a semiconductor device, a metallic gate electrode film, a protective film and an offset nitride film are formed on a semiconductor substrate to compose a stacked structure. An insulating film which covers the stacked structure is etched to expose the offset nitride film, and the exposed offset nitride film is etched to expose the protective film. The exposed protective film may be etched to expose the metallic gate electrode film under predetermined etching conditions. An etching rate of the protective film is greater than that of the metallic gate electrode film. The etching of the insulating film and the etching of the exposed offset nitride film may form a contact hole. A conductive plug is formed in the contact hole.

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