Manufacturing method of a semiconductor device

Details Manufacturing method of a semiconductor device Manufacturing method of a semiconductor device

2005-09-15

2010-06-29

Bryant, Kiesha R (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21168

Reexamination Certificate

active

07745348

ABSTRACT:
A method of manufacturing a semiconductor device employs a PEALD method including using an organometallic Ta precursor to form a TaN thin film. As a result, a conformal TaN diffusion barrier may be formed at a temperature of 250° C. or higher, so that impurities are reduced and density is increased in the TaN thin film.

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