Manufacturing method of a semiconductor device

Details Manufacturing method of a semiconductor device Manufacturing method of a semiconductor device

2005-03-29

2010-06-15

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S549000, C257SE21324, C257SE21336

Reexamination Certificate

active

07737012

ABSTRACT:
An amorphous layer101is formed in a region from a surface of a silicon substrate100to a first depth A. At this time, defects103are generated near an amorphous-crystal interface102.By heat treatment, the crystal structure of the amorphous layer101is restored in a region from the first depth A to a second depth B that is shallower than the first depth A. The resultant amorphous layer101extends from the surface of the silicon substrate100to the second depth B. The defects103remain at the first depth A. By ion implantation, a pn junction104is formed at a third depth C that is shallower than the second depth B.

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