Semiconductor device manufacturing: process – Gettering of substrate – By layers which are coated – contacted – or diffused
Reexamination Certificate
2009-04-20
2010-12-21
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Gettering of substrate
By layers which are coated, contacted, or diffused
C438S514000, C438S766000, C257S077000, C257S758000
Reexamination Certificate
active
07855131
ABSTRACT:
A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.
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Fujiwara Hirokazu
Katsuno Takashi
Konishi Masaki
Okuno Eiichi
Watanbe Yukihiko
Dang Phuc T
Denso Corporation
Oliff & Berridg,e PLC
Toyota Jidosha & Kabushiki Kaisha
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