Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2005-12-20
2005-12-20
McPherson, John A. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S314000, C430S316000, C430S317000, C430S319000
Reexamination Certificate
active
06977134
ABSTRACT:
A manufacturing method for a MOSFET gate structure. The method comprises providing a substrate, sequentially depositing a pad layer and a dielectric layer thereon, defining a gate trench passing through the dielectric layer and the pad layer to expose a predetermined gate area of the substrate, sequentially forming a gate dielectric layer, a first conductive layer, a second conductive layer, and a cap layer on the exposed substrate in the gate trench to form a damascene gate structure, and removing the dielectric layer.
REFERENCES:
patent: 6403483 (2002-06-01), Hao et al.
patent: 2001/0046777 (2001-11-01), Kim et al.
patent: 2004/0092073 (2004-05-01), Cabral et al.
Chen Yi-Nan
Hao Chung-Peng
Mao Hui-Min
Tsai Tzu-Ching
Chacko-Davis Daborah
McPherson John A.
Nanya Technology Corporation
Quintero Law Office
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