Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2005-05-10
2005-05-10
Chaudhari, Chandra (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S458000
Reexamination Certificate
active
06890788
ABSTRACT:
A release layer is formed on a substrate, and plural thin-film patterns are formed on the release layer. The release layer is etched back at a prescribed depth at least in regions close to the circumferences of the thin-film patterns. The thin-film patterns are transferred sequentially to a counter substrate to be laminated on the counter substrate and to thereby form a micro structure. This manufacturing method is employed in a case that the combination of thin-film patterns and are lease layer is such that when a prescribed pressure is applied to each of the thin-film patterns on the release layer in the transferring, the height of a raised portion of the release layer that would be appeared in a region close to the circumference of the thin-film pattern if the release layer were not be etched back is greater than or equal to the thickness of the thin-film pattern.
REFERENCES:
patent: 6506620 (2003-01-01), Scharf et al.
patent: 6790699 (2004-09-01), Vossenberg et al.
patent: 20020197761 (2002-12-01), Patel et al.
patent: 20030054588 (2003-03-01), Patel et al.
patent: A 11-28768 (1999-02-01), None
patent: A 2000-238000 (2000-09-01), None
Hotta Hiroyuki
Takahashi Mutsuya
Yamada Takayuki
Chaudhari Chandra
Fuji 'Xerox Co., Ltd.
LandOfFree
Manufacturing method of a micro structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method of a micro structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of a micro structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3451189