Manufacturing method for thin film transistor on insulator

Details Manufacturing method for thin film transistor on insulator Manufacturing method for thin film transistor on insulator

2008-10-15

2011-11-08

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21415

Reexamination Certificate

active

08053289

ABSTRACT:
In a method for manufacturing a semiconductor device, a semiconductor film formed over an insulator is doped with an impurity element to a depth less than the thickness of the semiconductor film, thereby forming an impurity doped layer; a metal silicide layer is formed on the impurity doped layer; the metal silicide layer and the semiconductor film are etched to form a recessed portion; and a layer which is not doped with the impurity element and is located at the bottom of the recessed portion of the semiconductor film is thinned to make a channel formation region. Further, a gate electrode is formed in the recessed portion over the thinned non impurity doped layer, with an insulating film interposed therebetween.

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