Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from liquid combined with subsequent diverse...
Reexamination Certificate
2011-07-12
2011-07-12
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from liquid combined with subsequent diverse...
C257SE21114
Reexamination Certificate
active
07977219
ABSTRACT:
In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate.
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Isogai Hiromichi
Izunome Koji
Kashima Kazuhiko
Maeda Susumu
Murayama Kumiko
Chaudhari Chandra
Covalent Materials Corporation
Foley & Lardner LLP
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