Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-26
2006-09-26
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S626000, C438S627000, C438S629000, C438S637000, C438S638000
Reexamination Certificate
active
07112527
ABSTRACT:
A semiconductor device having regions for forming a plurality of functional blocks and a region for forming wiring layers for connecting the functional blocks, wherein each of the regions for forming the functional blocks includes a multilayer wiring, and the region for forming the wiring layers for connecting adjacent functional blocks includes a coaxial line comprised of a signal line and a ground line surrounding the signal line via an insulating film.
REFERENCES:
patent: 5824570 (1998-10-01), Aoki et al.
patent: 5874778 (1999-02-01), Bhattacharyya et al.
patent: 5952709 (1999-09-01), Kitazawa et al.
patent: 6225207 (2001-05-01), Parikh
patent: 6242796 (2001-06-01), Sim et al.
patent: 6246112 (2001-06-01), Ball et al.
patent: 6303422 (2001-10-01), Abe et al.
patent: 6481013 (2002-11-01), Dinwiddie et al.
patent: 6720245 (2004-04-01), Stucchi et al.
patent: 2002/0030628 (2002-03-01), Tsai
patent: 2002/0102835 (2002-08-01), Stucchi et al.
patent: 2003/0064577 (2003-04-01), Hsu et al.
patent: 2005/0245063 (2005-11-01), Chinthakindi et al.
patent: 2006/0097396 (2006-05-01), Kamiyama et al.
patent: 06-084913 (1994-03-01), None
patent: 06-132288 (1994-05-01), None
patent: 08-316416 (1996-11-01), None
patent: 11-260930 (1999-09-01), None
U.S. Appl. No. 09/986,051, filed Nov. 7, 2001.
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
Thomas Toniae M.
Wilczewski Mary
LandOfFree
Manufacturing method for short distance wiring layers and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method for short distance wiring layers and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for short distance wiring layers and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3586303