Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-08-01
2006-08-01
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S016000, C438S285000, C438S507000, C438S508000, C438S522000, C438S526000, C438S528000, C438S530000, C438S973000, C216S002000, C216S060000, C257SE21120
Reexamination Certificate
active
07084051
ABSTRACT:
A purpose of the invention is to provide a manufacturing method for a semiconductor substrate in which a high quality strained silicon channel can easily be formed without sacrificing the processing efficiency of a wafer and to provide a manufacturing method for a semiconductor device wherein the driving performance of a PMOS transistor, in addition to that of an NMOS transistor, can be improved.The invention provides a manufacturing method for a semiconductor substrate with the steps of: forming a SiGe film on the top surface of a substrate having a silicon monocrystal layer in the (111) or (110) plane direction as the surface layer; introducing buried crystal defects into the above described substrate by carrying out ion implantation and annealing treatment; and forming a semiconductor film on the above described SiGe film.
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Fourson George
Garcia Joannie Adelle
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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