Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation
Reexamination Certificate
2005-03-22
2005-03-22
Hu, Shouxiang (Department: 2811)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Ionized irradiation
C438S478000, C438S509000, C438S518000, C438S522000, C438S933000
Reexamination Certificate
active
06869897
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor substrate, comprising the step of: forming a first buffer Si layer on a substrate having a silicon surface; epitaxially growing, in sequence, a first strained SiGe layer and a first Si layer above the first buffer Si layer; implanting ions into the resulting substrate followed by annealing so as to relax the lattice of the first strained SiGe layer and to thereby providing tensile strain in the first Si layer and so that tensile strain is provided in the first Si layer; and epitaxially growing, in sequence, a second buffer Si layer and a second SiGe layer above the resulting substrate; and forming a second Si layer having tensile strain on the second SiGe layer.
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D. M. Follstaedt et al., “Cavity-dislocation interactions in Si-Ge and implications for heterostructure relaxation”, Applied Physics Letters, 69 (14), Sep. 30, 1996, pp. 2059-2061.
Hu Shouxiang
Nixon & Vanderhye P.C.
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