Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-01-18
2011-01-18
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S154000, C438S199000, C438S200000, C257SE21530, C257SE21632
Reexamination Certificate
active
07871871
ABSTRACT:
In mass production of CMIS integrated circuit devices or the like, electric characteristics, such as Vth (threshold voltage) or the like, disadvantageously vary due to variations in gate length of the MISFET. This problem has become serious because of a short channel effect. In order to solve the problem, various kinds of feed-forward techniques have been studied in which a subsequent variation factor process is regulated to be reversed with respect to variations in a previous variation factor process so as to cause these variation factors to cancel each other out. Since the feed-back technique has an effect of the cancellation process over the entire system, the technique can be relatively easily applied to a product with a single type of MISFE, but is difficult to be applied to a product equipped with a plurality of types of MISFETs. The invention is adapted to adjust the amount of halo implantation by multivariate analysis based on the result of a patterning step of the gate electrode and a film forming step of an offset spacer.
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Hishiki Masanobu
Kawashima Hiroshi
Mitsuda Katsuhiro
Miura Yaichiro
Miles & Stockbridge P.C.
Nguyen Thanh
Renesas Electronics Corporation
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