Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-06-13
2010-12-14
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S653000, C438S761000, C438S508000
Reexamination Certificate
active
07851351
ABSTRACT:
A method for manufacturing semiconductor devices includes the steps of; forming an insulating film comprising a fluorine added carbon film on a substrate; forming a first barrier layer comprising a silicon nitride film on the insulating film by exposing a surface of the substrate formed with the insulating film to a plasma containing each active specie of a silicon and a nitride; forming a second barrier layer comprising a film containing silicon, carbon, and nitride on the first barrier layer by exposing a surface of the substrate formed with the first barrier layer to a plasma containing each active specie of the silicon and a carbon; and forming a film containing silicon and oxygen on the second barrier layer by exposing a surface of the substrate formed with the second barrier layer to a plasma containing each active specie of the silicon and an oxygen.
REFERENCES:
patent: 6429518 (2002-08-01), Endo
patent: 1182956 (1998-05-01), None
patent: 1106030 (2003-04-01), None
patent: 2005-302811 (2005-10-01), None
patent: WO 2000/021124 (2000-04-01), None
patent: WO 2000/054329 (2000-09-01), None
patent: WO 2005/069367 (2005-07-01), None
Text of the first offive action the merits (China) mailed on Oct. 23, 2009 Appl.No. 2007800013688, Examiner:Xu Guoliang, 2pgs.
Le Dung A.
Masuvalley & Partners
Tokyo Electron Limited
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