Manufacturing method for semiconductor devices

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S725000, C438S732000

Reexamination Certificate

active

06977229

ABSTRACT:
The present invention is provided to prevent yield reduction of semiconductor device in dry cleaning of semiconductor device manufacturing process. The electric action and chemical action due to plasma of a first gas generated by means of a plasma generating means and the physical action due to viscous friction force of high speed gas flow generated by means of a planar pad that is brought close to the main surface of a wafer are applied together for cleaning the main surface of the wafer. After cleaning, the wafer is exposed to plasma of a second gas in the same vacuum chamber and then transferred to the atmosphere.

REFERENCES:
patent: 6713401 (2004-03-01), Yokogawa et al.
patent: 8-85887 (1994-09-01), None
patent: 8-131981 (1994-11-01), None
patent: 9-17776 (1995-06-01), None

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