Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-12-20
2005-12-20
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S725000, C438S732000
Reexamination Certificate
active
06977229
ABSTRACT:
The present invention is provided to prevent yield reduction of semiconductor device in dry cleaning of semiconductor device manufacturing process. The electric action and chemical action due to plasma of a first gas generated by means of a plasma generating means and the physical action due to viscous friction force of high speed gas flow generated by means of a planar pad that is brought close to the main surface of a wafer are applied together for cleaning the main surface of the wafer. After cleaning, the wafer is exposed to plasma of a second gas in the same vacuum chamber and then transferred to the atmosphere.
REFERENCES:
patent: 6713401 (2004-03-01), Yokogawa et al.
patent: 8-85887 (1994-09-01), None
patent: 8-131981 (1994-11-01), None
patent: 9-17776 (1995-06-01), None
Izawa Masaru
Momonoi Yoshinori
Yokogawa Ken'etsu
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Huynh Yennhu B.
Jr. Carl Whitehead
Reed Smith LLP
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