Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal
Reexamination Certificate
2007-07-24
2007-07-24
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Forming schottky junction
Using platinum group metal
C438S682000
Reexamination Certificate
active
11229548
ABSTRACT:
This invention provides a semiconductor device manufacturing method including forming a T type gate electrode having a wide region in an upper portion, the method including steps of: forming rectangular gate polysilicon; forming a nitride film covering the polysilicon; forming an oxide film thick on the nitride film; etching back the oxide film to expose the nitride film; etching the exposed nitride film, exposing the gate polysilicon, and forming a space; forming undoped polysilicon burying the space; etching back the undoped polysilicon to form a wide portion in the upper portion of the gate polysilicon; and etching the oxide film and the nitride film; siliciding the wide undoped silicon to form titanium silicide (or cobalt silicide). This manufacturing method makes it possible to easily form the T type gate electrode with good yield.
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Oki Electric Industry Co. Ltd.
Rabin & Berdo P.C.
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