Manufacturing method for semiconductor device having a...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

Reexamination Certificate

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C438S579000, C438S592000

Reexamination Certificate

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06979634

ABSTRACT:
This invention provides a semiconductor device manufacturing method including forming a T type gate electrode having a wide region in an upper portion, the method including steps of: forming rectangular gate polysilicon; forming a nitride film covering the polysilicon; forming an oxide film thick on the nitride film; etching back the oxide film to expose the nitride film; etching the exposed nitride film, exposing the gate polysilicon, and forming a space; forming undoped polysilicon burying the space; etching back the undoped polysilicon to form a wide portion in the upper portion of the gate polysilicon; and etching the oxide film and the nitride film; siliciding the wide undoped silicon to form titanium suicide (or cobalt silicide). This manufacturing method makes it possible to easily form the T type gate electrode with good yield.

REFERENCES:
patent: 5268330 (1993-12-01), Givens et al.
patent: 5783475 (1998-07-01), Ramaswami
patent: 5783479 (1998-07-01), Lin et al.
patent: 5920783 (1999-07-01), Tseng et al.
patent: 6180501 (2001-01-01), Pey et al.
patent: 6239007 (2001-05-01), Wu
patent: 6309933 (2001-10-01), Li et al.
patent: 6448163 (2002-09-01), Holbrook et al.
patent: 2002/0016042 (2002-02-01), Xia et al.
patent: 2003/0151097 (2003-08-01), Ryu et al.
patent: 05-063002 (1993-03-01), None
patent: 07-066406 (1995-03-01), None
patent: 08-037301 (1996-02-01), None
patent: 10-335651 (1998-12-01), None
patent: 2000-036594 (2000-02-01), None
patent: 2000-150879 (2000-05-01), None
patent: WO 01/11669 (2001-02-01), None

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