Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-12-27
2005-12-27
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S579000, C438S592000
Reexamination Certificate
active
06979634
ABSTRACT:
This invention provides a semiconductor device manufacturing method including forming a T type gate electrode having a wide region in an upper portion, the method including steps of: forming rectangular gate polysilicon; forming a nitride film covering the polysilicon; forming an oxide film thick on the nitride film; etching back the oxide film to expose the nitride film; etching the exposed nitride film, exposing the gate polysilicon, and forming a space; forming undoped polysilicon burying the space; etching back the undoped polysilicon to form a wide portion in the upper portion of the gate polysilicon; and etching the oxide film and the nitride film; siliciding the wide undoped silicon to form titanium suicide (or cobalt silicide). This manufacturing method makes it possible to easily form the T type gate electrode with good yield.
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Fourson George
Oki Electric Industry Co. Ltd.
Rabin & Berdo PC
Toledo Fernando L.
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