Manufacturing method for semiconductor device and...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

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C438S118000, C438S108000, C438S617000, C438S014000, C257S200000, C257S369000, C257SE27062

Reexamination Certificate

active

07897524

ABSTRACT:
A manufacturing method for a semiconductor device including: determining pattern dependency of a radiation factor of an element forming surface of one wafer having a predetermined pattern formed on the wafer; determining a heating surface of the wafer, based on the pattern dependency of the radiation factor; holding the one wafer having the determined heating surface and another wafer having a determined heating surface, spaced at a predetermined distance in such a manner that non-heating surfaces of the one wafer and the another wafer oppose to each other; and heating the each heating surface of the one wafer and the another wafer.

REFERENCES:
patent: 6849831 (2005-02-01), Timans et al.
patent: 7283734 (2007-10-01), Kubo
patent: 2003/0166313 (2003-09-01), Nishikawa et al.
patent: 2004/0108519 (2004-06-01), Itani
patent: 2007/0292598 (2007-12-01), Tada et al.
patent: 2003-051439 (2003-02-01), None
patent: 2007-095889 (2007-04-01), None

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