Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2011-03-01
2011-03-01
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S118000, C438S108000, C438S617000, C438S014000, C257S200000, C257S369000, C257SE27062
Reexamination Certificate
active
07897524
ABSTRACT:
A manufacturing method for a semiconductor device including: determining pattern dependency of a radiation factor of an element forming surface of one wafer having a predetermined pattern formed on the wafer; determining a heating surface of the wafer, based on the pattern dependency of the radiation factor; holding the one wafer having the determined heating surface and another wafer having a determined heating surface, spaced at a predetermined distance in such a manner that non-heating surfaces of the one wafer and the another wafer oppose to each other; and heating the each heating surface of the one wafer and the another wafer.
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Kamimura Masaki
Yoshino Kenichi
Baptiste Wilner Jean
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Smith Matthew S
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