Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-05-17
2011-05-17
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S683000, C438S637000, C438S745000, C257SE21476
Reexamination Certificate
active
07943516
ABSTRACT:
A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.
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Japanese Patent Office issued a Japanese Office Action dated Jun. 30, 2009, Application No. 2004-131419.
Aoki Hidemitsu
Ikegami Kaoru
Ishikawa Norio
Ohwada Takuo
Suzuki Tatsuya
Kanto Kagaku Kabushiki Kaisha
Nguyen Thanh
Renesas Electronics Corporation
Young & Thompson
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