Manufacturing method for semiconductor device

Details Manufacturing method for semiconductor device Manufacturing method for semiconductor device

1998-02-06

2000-09-19

Niebling, John F.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438781, 438787, H01L 2131, H01L 21469

Patent

active

061211605

ABSTRACT:
A manufacturing method for a semiconductor device, wherein a polyimide-based resin layer is covered with a P-CVD oxide silicon film or the like before it is subjected to degassing process in order to prevent blisters or cracks of a cover film of a semiconductor device which has the polyimide-based resin layer as an interlayer insulating film. This makes it possible to take the semiconductor device out in open air after the degassing process and to prevent the dispersion of reaction products resulting from amidation during the degassing process.

REFERENCES:
patent: 5084404 (1992-01-01), Sharpe-Geisler
patent: 5219787 (1993-06-01), Carey et al.

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