Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-18
2009-08-18
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C257SE21579
Reexamination Certificate
active
07576001
ABSTRACT:
A semiconductor device manufacturing method for suppressing surface roughness of a Low-k insulating film during etching. In a laminated structure comprising a layer having formed thereon a lower copper wiring, a SiC film and a SiOC film, a via and an upper copper wiring are formed as follows. The SiOC film is etched to form a via hole opening that reaches the SiC film and then to form wiring grooves that communicate with the opening. Thereafter, when the SiC film on the bottom of the opening is etched to form a via hole, a deposited film of etching products is formed on surfaces of the via hole and the wiring grooves. This deposited film allows planarization of the SiOC film surface, which is exposed to plasma, formed thereon the via hole and the wiring grooves. Subsequently, formation of a Ta film and burying of plating copper are performed.
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Fujitsu Microelectronics Limited
Ghyka Alexander G
Patel Reema
Westerman, Hattori, Daniels & Adrian , LLP.
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