Manufacturing method for semiconductor device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array

Reexamination Certificate

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C257SE33053

Reexamination Certificate

active

10928271

ABSTRACT:
The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.

REFERENCES:
patent: 5181985 (1993-01-01), Lampert et al.
patent: 5294570 (1994-03-01), Fleming, Jr. et al.
patent: 5317169 (1994-05-01), Nakano et al.
patent: 5505985 (1996-04-01), Nakamura et al.
patent: 5712198 (1998-01-01), Shive et al.
patent: 5726457 (1998-03-01), Nakano et al.
patent: 5773325 (1998-06-01), Teramoto
patent: 5879969 (1999-03-01), Yamazaki et al.
patent: 6016033 (2000-01-01), Jones et al.
patent: 6177302 (2001-01-01), Yamazaki et al.
patent: 6221766 (2001-04-01), Wasserman
patent: 6228751 (2001-05-01), Yamazaki et al.
patent: 6277657 (2001-08-01), Nozawa et al.
patent: 6313017 (2001-11-01), Varhue
patent: 6426288 (2002-07-01), Meikle
patent: 6433487 (2002-08-01), Yamazaki
patent: 6982462 (2006-01-01), Koyama
patent: 2002/0063169 (2002-05-01), Verhaverbeke et al.
Stanley Wolf, “Silicon Processing for the VSLI Era,” vol. 1, Lattice Press, 1986, p. 516.

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