Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Patent
1995-04-04
1998-03-24
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
438365, 438366, H01L 21331
Patent
active
057312400
ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of: depositing a semiconductor film onto a semiconductor substrate, the semiconductor film having a main component which is the same material as the semiconductor substrate; and forming a first insulating layer on the semiconductor substrate. This method also includes the steps of: removing predetermined areas from the first insulating layer and the semiconductor film so as to form an opening; forming a second insulating layer inside the opening and on the first insulating layer; and removing the second insulating layer by anisotropic etching so that the side wall of the opening remains.
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Canon Kabushiki Kaisha
Nguyen Tuan H.
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