Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2011-08-02
2011-08-02
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C438S011000, C438S018000, C257SE21524
Reexamination Certificate
active
07989803
ABSTRACT:
In a semiconductor wafer that has semiconductor devices arranged in a plurality of device-formation-regions and a TEG placed in dividing regions that define the device-formation-regions, a TEG-placement portion is arranged in the dividing regions partially expanded in width, and the TEG is placed in the TEG-placement portion. Additionally, a protective sheet is stuck to the semiconductor wafer, then plasma etching is performed, and the TEG is removed in a state where it remains in the dividing region and stuck to the protective sheet together with the protective sheet by peeling off the protective sheet, thereby the device-formation-regions are divided into individual pieces, and the semiconductor chips are manufactured.
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Arita Kiyoshi
Nishinaka Teruaki
Jiang Fang-Xing
Panasonic Corporation
Warren Matthew E
Wenderoth , Lind & Ponack, L.L.P.
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