Manufacturing method for planar microprobe including electrostat

Etching a substrate: processes – Etching of semiconductor material to produce an article...

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216 11, 438 52, 205122, 205223, H01L 21302

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061362085

ABSTRACT:
The present invention discloses a planar microprobe and method of manufacturing the same. The present invention utilizes semiconductor process technologies that includes electroplating technology and sacrificial layer technology to integrate constituent elements on a silicon wafer having an insulator layer. The planar microprobe comprises: an upper cantilever beam including a first electrode; a supporting pad coupled to the upper cantilever beam; and a lower cantilever beam coupled to the supporting pad, situated below the upper cantilever beam and spaced by a distance from the upper cantilever beam. Besides, the lower cantilever beam comprises: a second electrode in cooperation with the first electrode to control a vertical displacement of the lower cantilever beam by applying an external voltage thereto. A tip is coupled to the second electrode. The microprobe is manufactured by depositing a photoresist sacrificial layer on a lower cantilever beam. Metal is electroplated to form an upper cantilever beam. Then, residual silicon, silicon oxide and photoresist are etched to release the microprobe.

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