Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-04-12
2011-04-12
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S176000, C438S195000, C438S283000, C438S588000, C257SE21179
Reexamination Certificate
active
07923315
ABSTRACT:
The present invention relates to a method for fabricating a planar independent-double-gate FET or a planar gate-all-around FET on a bulk semiconductor substrate. The method comprises refilling a surface recess in an active semiconductor region with a buried sacrificial layer, and, after preparing a pre-processing a gate stack by respective deposition and patterning, the formation of a recess in the isolation regions so as to cause the recess to extend, in a depth direction that points towards the inner substrate, to a depth level that allows removing the buried sacrificial layer and so as to cause the recess to undercut portions of gate stack in the channel direction.
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Coronel Philippe
Denorme Stephanne
Pouydebasque Arnaud
NXP B.V.
Stark Jarrett J
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