Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-05-24
2011-05-24
Vu, David (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C323S250000
Reexamination Certificate
active
07947600
ABSTRACT:
A micro-transformer manufacturing method is provided, which can improve throughput, prevent a crack from entering an insulating film between coils, and manufacture the micro-transformer without using a mask material having a high selection ratio. An insulating film is deposited on the whole face of a semiconductor substrate having an impurity-diffused region. This insulating film is partially removed to form a first opening and a second opening. A primary coil is formed such that a center pad contacts the impurity-diffused region through the first opening. A thin insulating film is deposited on the primary coil. An insulator material having a secondary coil formed thereon is adhered onto the insulating film on the primary coil by adhesive tape. The insulator material is sized to not cover both a pad, connected with the center pad of the primary coil through the impurity-diffused region, and an outer-end pad of the primary coil.
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Hiruta Reiko
Iwaya Masanobu
Mochizuki Kunio
Ueno Katsunori
Fuji Electric Systems Co., Ltd.
Pathak Shantanu C
Rossi Kimms & McDowell LLP
Vu David
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