Manufacturing method for epitaxial wafer

Details Manufacturing method for epitaxial wafer Manufacturing method for epitaxial wafer

2011-06-14

2011-06-14

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S503000, C438S607000, C257SE21461, C257SE21463, C118S715000, C118S725000, C118S728000, C118S729000, C118S620000, C118S050000, C118S050100, C118S641000

Reexamination Certificate

active

07960254

ABSTRACT:
To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial wafer according to the present invention includes: an oxide film forming step in which an oxide film is formed on a back surface thereof; an etching step in which a hydrophobic portion exposing a back surface of the semiconductor wafer is provided by partially removing the oxide film; a wafer placing step in which the semiconductor wafer is placed; and an epitaxial growth step in which an epitaxial layer is grown on a main surface of the semiconductor wafer; and the diameter of the lift pin installation circle provided on a circle on a bottom face of a susceptor is smaller than that of the hydrophobic portion.

REFERENCES:
patent: 2003/0119283 (2003-06-01), Ishibashi et al.
patent: 2007/0227441 (2007-10-01), Narahara et al.
patent: 2009/0127672 (2009-05-01), Kinbara
patent: 2009/0205562 (2009-08-01), Wada
patent: 2006-5164 (2006-01-01), None
English language Abstract of JP 2006-5164, Jan. 5, 2006.

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