Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
2006-08-15
2006-08-15
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Electron emitter manufacture
C438S020000, C438S022000, C438S048000
Reexamination Certificate
active
07091054
ABSTRACT:
An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.
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Jeong Soo-hwan
Kim Dong-wook
Moon Chang-wook
Yoo In-kyeong
Nelms David
Nguyen Thinh T
Samsung Electronics Co,. Ltd.
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