Manufacturing method for emitter for electron-beam...

Semiconductor device manufacturing: process – Electron emitter manufacture

Reexamination Certificate

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C438S020000, C438S022000, C438S048000

Reexamination Certificate

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07091054

ABSTRACT:
An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

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patent: 2002/0167001 (2002-11-01), Chen et al.
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Yokoo et al., “Energy distribution of tunneling emission from Si-gate metal-oxide-semiconductor cathrode”, J. Vac. Sci. Technol. B, vol. 12, No. 2, pp. 801-805, 1994.

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