Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-05-16
2006-05-16
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S153000
Reexamination Certificate
active
07045398
ABSTRACT:
To provide a manufacturing method for an electro-optical device and semiconductor device which improve the shape of semiconductor layers in electro-optical devices and semiconductor device having semiconductor layers with different thickness, enabling manufacturing with good yield. The manufacturing method includes a patterning process to pattern a mono-crystalline silicone layer (semiconductor layer) formed on a supporting substrate with an insulating film introduced therebetween into a predetermined two-dimensional shape and dividing the semiconductor layer into a plurality of semiconductor regions, and a thin-layer formation process to perform thin-layer formation to form the semiconductor layer of a first semiconductor region, of the semiconductor regions formed by the patterning process, to have a predetermined semiconductor layer thickness.
REFERENCES:
patent: 4753896 (1988-06-01), Matloubian
patent: 5627084 (1997-05-01), Yamazaki et al.
patent: 5648274 (1997-07-01), Chandler
patent: 5851918 (1998-12-01), Song et al.
patent: 6025629 (2000-02-01), Ipposhi et al.
patent: 6222234 (2001-04-01), Imai
patent: 6337232 (2002-01-01), Kusumoto et al.
patent: 6653656 (2003-11-01), Iwamatsu et al.
patent: 04192472 (1992-07-01), None
patent: 04-279604 (1992-10-01), None
patent: A-5-218434 (1993-08-01), None
patent: A 05-313195 (1993-11-01), None
patent: A-9-135030 (1997-05-01), None
patent: A-9-260679 (1997-10-01), None
patent: A-11-74531 (1999-03-01), None
patent: A 2001-125135 (2001-05-01), None
patent: 2001313396 (2001-11-01), None
patent: A 2001-313396 (2001-11-01), None
patent: 1999-0083271 (1999-11-01), None
Kebede Brook
Seiko Epson Corporation
LandOfFree
Manufacturing method for electro-optical device,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method for electro-optical device,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for electro-optical device,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3620151