Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2011-07-26
2011-07-26
Pham, Hoai v (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S172000, C257SE21403
Reexamination Certificate
active
07985637
ABSTRACT:
After an n-type AlGaN barrier layer (3) is formed over a substrate (1), an n-type GaN contact layer (4) is formed over the n-type AlGaN barrier layer (3). Next, the n-type GaN contact layer (4) is wet-etched with using an etching solution containing an organic alkali agent and an oxidizer while the n-type GaN contact layer (4) is irradiated with an ultraviolet illumination.
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Notification of Transmittal of Translation of the International Preliminary Report on Patentability (Form PCT/IB/338) of International Application No. PCT/JP2006/304795 mailed Sep. 25, 2008 with Forms PCT/IB/373 and PCT/ISA/237.
Fujitsu Limited
Pham Hoai v
Westerman Hattori Daniels & Adrian LLP
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