Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-03-02
2000-07-25
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438665, 438683, 438669, H01L 2144
Patent
active
060936460
ABSTRACT:
The present invention provides a manufacturing method for a poly film with an anti-reflection rough surface is provided. The method comprises steps of, at first, a thin film is formed over a substrate, and a amorphous silicon layer is formed over the thin film. Next, in situ a first annealing procedure is performed over the amorphous silicon layer. The amorphous silicon layer is changed into a polysilicon layer with the anti-reflection rough surface. Next, in situ a second annealing procedure is selectively performed. The polysilicon layer with the anti-reflection rough surface is doped by reacting with a gas induced. Then, the thin film and the polysilicon layer with the anti-reflection rough surface is defined, whereby the poly film with an anti-reflection rough surface is formed over the substrate.
REFERENCES:
patent: 5324684 (1994-06-01), Kermani et al.
patent: 5604157 (1997-02-01), Dai et al.
patent: 5888295 (1999-03-01), Sandhu et al.
Hsiao Steven
Kuo Jacky
Lin Mark
Everhart Caridad
United Semiconductor Corp.
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