Manufacturing method for a silicon single crystal wafer

Details Manufacturing method for a silicon single crystal wafer Manufacturing method for a silicon single crystal wafer

1997-12-12

1999-09-21

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117932, C30B 1520

Patent

active

059548738

ABSTRACT:
A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of the pulling rate, V (mm/min), and the temperature gradient G (.degree. C./mm) permits crystals to be formed that are free from OSF rings, and other types of defects.

REFERENCES:
patent: 5138179 (1992-08-01), Baba et al.

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