Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-03-08
2005-03-08
Graybill, David E. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S154000, C438S199000, C438S216000, C438S230000, C438S286000, C438S287000
Reexamination Certificate
active
06864128
ABSTRACT:
A gate insulating film4, two polysilicon films5and7, and a silicon nitride film9are successively laminated on a semiconductor substrate1in this order. Each of the polysilicon films5and7contains phosphorus. The polysilicon film5has a region having a phosphorus concentration higher than that of the polysilicon film7. Gate electrodes10n, 10p, 40n, and40pare formed on the gate insulating film4by partly etching the polysilicon films5and7and the silicon nitride film9. In this case, the etching rate of the region of the polysilicon film5, having a phosphorus concentration higher than that of the polysilicon film7, is higher than that of the polysilicon film7. Due to this difference, notches are formed at the bottom portions on side surfaces of respective gate electrodes10p, 40n, and40p.
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Nishida Yukio
Ohta Kazunobu
Graybill David E.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
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