Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2011-08-02
2011-08-02
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
C257SE21561
Reexamination Certificate
active
07989327
ABSTRACT:
A method of manufacturing a semi-conductor on insulator substrate from an SOI substrate, wherein a Si1-xGexlayer is formed on a superficial layer of silicon having a buried electrical insulating layer. A silicon oxide layer is formed on the Si1-xGexlayer. The resulting stack of silicon, Si1-xGexand silicon oxide layers is etched up to the buried insulating layer leaving an island of the stack, or up to the superficial layer leaving a zone of silicon and an island of the stack. A mask is formed to protect against oxidation on the etched structure, wherein the protective mask only leaves visible the silicon oxide layer of the island. The germanium of the Si1-xGexlayer is condensed on the island to obtain an island comprising a layer that is enriched in germanium, or even a layer of germanium, on the insulating layer, with a silicon oxide layer on top of it.
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French Search Report, (Aug. 2008).
Clavelier Laurent
Damlencourt Jean-Francois
Vincent Benjamin
Chaudhari Chandra
Commissariat a l''Energie Atomique
Pearne & Gordon LLP
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