Manufacturing method for a power device having an...

Details Manufacturing method for a power device having an... Manufacturing method for a power device having an...

2008-03-18

2008-03-18

Luu, Chuong A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S275000, C438S287000, C438S289000

Reexamination Certificate

active

07344966

ABSTRACT:
A manufacturing method for a power device integrated on a semiconductor substrate with double thickness of a gate dielectric layer is described, which comprises the following steps: forming first dielectric portions having a first thickness; forming on the whole semiconductor substrate a first dielectric layer thinner than the first dielectric portions; forming a conductive layer on the first dielectric layer; forming a second dielectric layer on the conductive layer; performing an etching step of the second dielectric layer and of the conductive layer to form first spacers and a gate electrode, to define, between the gate electrode and the substrate, second dielectric portions in the first dielectric layer, the second dielectric portions being auto-aligned with the first portions.

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patent: 6784060 (2004-08-01), Ryoo
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patent: 2002/0140042 (2002-10-01), Stout
patent: 2003/0141559 (2003-07-01), Moscatelli et al.

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