Manufacturing method and equipment of single silicon crystal

Details Manufacturing method and equipment of single silicon crystal Manufacturing method and equipment of single silicon crystal

1990-01-03

1992-06-30

Kunemund, Robert

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

1566171, 1566181, 1566204, C30B 1512

Patent

active

051261146

ABSTRACT:
According to the present invention, the inside of a crucible in which a molten raw material is placed is partitioned off with a partition ring so that a pulled single crystal is surrounded and the molten raw material may be moved and granular silicon is supplied to the outside of the partition ring, thereby to form the whole surface of outside molten liquid as a granular silicon soluble region so as to maintain the molten liquid surface on the inside of the partition ring at almost a constant level, and also to set the temperature of the molten liquid on the outside of the partition ring higher than the temperature of the inside thereof at least by 10.degree. C. or higher by covering the partition ring and the molten liquid surface on the outside thereof with a heat keeping board.

REFERENCES:
patent: 3265469 (1966-08-01), Hall
patent: 3582287 (1971-06-01), Capita
patent: 4036595 (1977-07-01), Lorenzini et al.
patent: 4330361 (1982-05-01), Kuhat-Kuhnenfeld et al.
patent: 4330362 (1982-05-01), Zulehner
patent: 4436577 (1984-03-01), Frederick et al.
patent: 4659421 (1987-04-01), Jewett
patent: 4911895 (1990-03-01), Kida et al.

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