Metal working – Barrier layer or semiconductor device making
Reexamination Certificate
2008-06-04
2009-12-22
Fourson, George (Department: 2823)
Metal working
Barrier layer or semiconductor device making
C438S005000, C438S757000
Reexamination Certificate
active
07635397
ABSTRACT:
A manufacturing apparatus for a semiconductor device, treating a SiN film formed on a wafer with phosphoric acid solution, including a processing bath to store phosphoric acid solution provided for treatment of the wafer, a control unit for calculating integrated SiN etching amount of the phosphoric acid solution, determining necessity of quality adjustment of the phosphoric acid solution, based on correlation between the integrated SiN etching amount calculated and etching selectivity to oxide film, and calculating a quality adjustment amount of the phosphoric acid solution as needed, and also including a mechanism to adjust the quality of the phosphoric acid solution based on the quality adjustment amount calculated.
REFERENCES:
patent: 5830375 (1998-11-01), Huang et al.
patent: 6001215 (1999-12-01), Ban
patent: 6326313 (2001-12-01), Couteau et al.
patent: 6376261 (2002-04-01), Campbell
patent: 6399517 (2002-06-01), Yokomizo et al.
patent: 6780277 (2004-08-01), Yokomizo et al.
patent: 2003/0011774 (2003-01-01), DiBello et al.
patent: 2005/0067101 (2005-03-01), Funabashi
patent: 2005/0159011 (2005-07-01), Thirumala et al.
patent: 2005/0263488 (2005-12-01), Change et al.
patent: 2008/0035609 (2008-02-01), Kashkoush et al.
patent: 9-275091 (1997-10-01), None
patent: 2001-23952 (2001-01-01), None
patent: 2004-288963 (2004-10-01), None
Notification of Reason(s) for Refusal issued by the Japanese Patent Office on Apr. 14, 2009, for Japanese Patent Application No. 2007-149465, and English-language translation thereof.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Fourson George
Kabushiki Kaisha Toshiba
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