Manufacturing a semiconductor device via etching a...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07932180

ABSTRACT:
A method of manufacturing a semiconductor device. The method includes providing a semiconductor chip including contact elements on a first face and a first layer between the first face and a second face opposite the first face. Placing the semiconductor chip on a carrier with the contact elements facing the carrier and etching the semiconductor chip until the first layer is reached.

REFERENCES:
patent: 5858814 (1999-01-01), Goossen et al.
patent: 6187611 (2001-02-01), Preston et al.
patent: 6251705 (2001-06-01), Degani et al.
patent: 6624522 (2003-09-01), Standing et al.
patent: 6632706 (2003-10-01), Leedy
patent: 6759268 (2004-07-01), Akagawa
patent: 6911392 (2005-06-01), Bieck et al.
patent: 6964915 (2005-11-01), Farnworth et al.
patent: 7268012 (2007-09-01), Jiang et al.
patent: 7300857 (2007-11-01), Akram et al.
patent: 2005/0176174 (2005-08-01), Leedy
patent: 2008/0054479 (2008-03-01), Watanabe
patent: 4411409 (1995-10-01), None
patent: 1148544 (2001-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Manufacturing a semiconductor device via etching a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing a semiconductor device via etching a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing a semiconductor device via etching a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2648364

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.