Manufacturing a semiconductor device

Details Manufacturing a semiconductor device Manufacturing a semiconductor device

2006-09-11

2008-10-28

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000, C438S474000, C257SE21134

Reexamination Certificate

active

07442592

ABSTRACT:
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020to 1×1021/cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.

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Naoharu Sugiyama,Strained Silicon Crystal on SiGe Substrate, Applied Physics, vol. 69, No. 11, Nov. 1, 2000, pp. 1315-1319.

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