Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-29
2005-03-29
Elms, Richard (Department: 2824)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000, C257S737000, C257S739000
Reexamination Certificate
active
06872651
ABSTRACT:
The invention includes a semiconductor device, and a method for making the same, wherein bumps of a semiconductor chip and inner leads of a film tape carrier can be securely bonded to each other by thermal welding using a heating unit. A semiconductor wafer50is etched using a potassium iodide or ammonium iodide solution. By the etching, a barrier metal layer48is removed while the upper face of a bump10is simultaneously roughened and many prominences12are formed. The formation of the prominences12increases the surface area of the upper face of the bump10and improves the bonding between the bump10of the semiconductor chip and the lead of the film tape carrier.
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Elms Richard
Oliff & Berridg,e PLC
Seiko Epson Corporation
Wilson Christian D.
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