Manufacture of semiconductor device using a-c anti-reflection co

Details Manufacture of semiconductor device using a-c anti-reflection co Manufacture of semiconductor device using a-c anti-reflection co

1995-03-15

1998-05-12

Baxter, Janet C.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430290, 430510, G03C 500

Patent

active

057503168

ABSTRACT:
A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I.sub.sw =I.delta./I.sub.ave to 0.2 or smaller, where I.sub.ave is an average value of light intensity in the photoresist film, and I.delta. is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.

REFERENCES:
patent: 5437961 (1995-08-01), Yano et al.
patent: 5472829 (1995-12-01), Ogawa

Affiliated with

Also associated with

Rating

Manufacture of semiconductor device using a-c anti-reflection co does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacture of semiconductor device using a-c anti-reflection co, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacture of semiconductor device using a-c anti-reflection co will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-978045