Manufacture of semiconductor device having reliable and fine con

Details Manufacture of semiconductor device having reliable and fine con Manufacture of semiconductor device having reliable and fine con

1997-05-15

1999-07-27

Brown, Peter Toby

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438638, 438640, 438527, 438533, H01L 214763

Patent

active

059306726

ABSTRACT:
A resist pattern (dummy pattern) is formed on the surface of a substrate which pattern has a shape corresponding to a desired connection hole, and thereafter an insulating film such as SOG is formed covering the resist pattern. The insulating film is etched back until the resist pattern is exposed and thereafter the resist pattern is removed by ashing or dissolving. With the above processes, a connection hole corresponding the resist pattern can be obtained. As a layer for forming the dummy pattern, an SiN or polysilicon layer may be used instead of a resist layer. The substrate may have wiring patterns formed thereon via an insulating film or may not have wiring patterns. A fine connection hole having a high aspect ratio can be formed.

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