Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-03
2009-10-20
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S202000, C257S411000, C257S632000, C257SE27104, C257SE29272, C257SE21208, C257SE21436
Reexamination Certificate
active
07605436
ABSTRACT:
A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of the heated silicon substrate, to deposit on the silicon substrate an Hf1-xAlxO:N film (0.1<x<0.3) having a higher specific dielectric constant than that of silicon oxide, and incorporating N, by thermal CVD. The method can form an oxide film of Hf1-xAlxO (0<x<0.3) having desired characteristics, as a gate insulation film.
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Estrada Michelle
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
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