Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material
Reexamination Certificate
2005-09-20
2005-09-20
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
C438S597000, C438S620000
Reexamination Certificate
active
06946375
ABSTRACT:
A sacrificial layer is formed in a recess of a substrate, and leads extending from the substrate into an area of the sacrificial layer are formed. A cut is formed from the bottom surface of the substrate, the cut extending from the bottom surface to the area of the sacrificial layer via the substrate, then the sacrificial layer is removed. A probe unit can be obtained having the leads whose front portions extend beyond the edge of the substrate. A through conductor may be formed in a through hole formed in a substrate. Leads may be formed on a photosensitive etching glass substrate to thereafter selectively etch the chemically cutting type glass.
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patent: 6362087 (2002-03-01), Wang et al.
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patent: 7-199219 (1995-04-01), None
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Hamano Tetsutsugu
Hattori Atsuo
Sugiura Masahiro
Yoshino Toshitaka
Coleman W. David
Dickstein Shapiro Morin & Oshinsky LLP.
Nguyen Khiem
Yamaha Corporation
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