Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2005-09-20

2005-09-20

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045013, C372S046012

Reexamination Certificate

active

06947461

ABSTRACT:
A semiconductor laser device includes a p-InP cladding layer, an active region, a first n-InP cladding layer, a second n-InP cladding layer, and an n-InGaAsP cladding layer with a thickness between 0.05 μm and 0.3 μm, sandwiched by the first and second n-laP cladding layers and laminated at a position closer to the active region than a position at which optical intensity of a near-field pattern of laser light emitted from the active region becomes substantially zero. The semiconductor laser device exhibits a small reduction in the optical output even when a large current flows, and has a high slope efficiency without changing the near-field pattern a great deal.

REFERENCES:
patent: 5355384 (1994-10-01), Inoue et al.
patent: 5608752 (1997-03-01), Goto et al.
patent: 6333945 (2001-12-01), Abe et al.
patent: 6606334 (2003-08-01), Shigihara et al.
patent: 2003/0031220 (2003-02-01), Takeuchi et al.
patent: 8-195529 (1996-07-01), None
patent: 11-243259 (1999-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3442809