Manufacture of MOSFET devices

Details Manufacture of MOSFET devices Manufacture of MOSFET devices

1998-09-15

2000-08-15

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438592, H01L 213205, H01L 214763

Patent

active

061036072

ABSTRACT:
The specification describes a process for making gate electrodes for silicon MOS transistor devices. The gate electrode is a composite of a first layer of tungsten suicide, a second layer of tungsten silicide nitride, and a third layer of tungsten silicide. The absence of polysilicon as a main constituent of the gate electrode eliminates depletion effects. The presence of nitride in the composite gate electrode impedes updiffusion of boron from the source and drain. The layers are preferably formed in situ in an PVD apparatus.

REFERENCES:
patent: 5049954 (1991-09-01), Shimada et al.
patent: 5164333 (1992-11-01), Schwalke et al.
patent: 5436489 (1995-07-01), Murase
patent: 5648668 (1997-07-01), Kasai
patent: 5872057 (1999-02-01), Lee
patent: 5907784 (1999-05-01), Larson
patent: 5933741 (1999-08-01), Tseng
patent: 5956585 (1999-09-01), Wen

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