Manufacture method for ZnO based compound semiconductor...

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Reexamination Certificate

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C117S944000, C117S956000, C428S689000, C428S336000, C428S697000, C428S699000, C428S701000, C428S702000

Reexamination Certificate

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07829207

ABSTRACT:
A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

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European Search Report dated Jan. 16, 2007 from the EPO in the counterpart EP application.
Communication form from the EPO in the counterpart EP application dated Jan. 16, 2007.

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