Manufacture method for semiconductor device having improved...

Details Manufacture method for semiconductor device having improved... Manufacture method for semiconductor device having improved...

2005-10-14

2009-11-03

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21584

Reexamination Certificate

active

07611984

ABSTRACT:
(a) A copper alloy film containing at least two types of metal elements in addition to copper is formed on the surface of an insulator containing oxygen and formed on a semiconductor substrate. (b) A metal film made of pure copper or copper alloy is formed on the copper alloy film. (c) After the step (a) or (b), heat treatment is performed under the condition that a metal oxide film is formed on a surface of the insulator through reaction between the oxygen in the insulator and the metal elements in the copper alloy film.

REFERENCES:
patent: 5130274 (1992-07-01), Harper et al.
patent: 5948467 (1999-09-01), Nguyen et al.
patent: 5969422 (1999-10-01), Ting et al.
patent: 6160315 (2000-12-01), Chiang et al.
patent: 6249055 (2001-06-01), Dubin
patent: 6664185 (2003-12-01), Wang et al.
patent: 6727177 (2004-04-01), Catabay et al.
patent: 2002/0115292 (2002-08-01), Andricacos et al.
patent: 2003/0160332 (2003-08-01), Jiang et al.
patent: 2004/0157431 (2004-08-01), Lin et al.
patent: 2008/0290517 (2008-11-01), Kageyama
patent: 1155057 (2004-06-01), None
patent: 7-60852 (1995-06-01), None
patent: 11-54458 (1999-02-01), None
patent: 2004-207251 (2004-07-01), None
patent: 1999-0042333 (1999-06-01), None
patent: WO 02/45142 (2002-06-01), None
Partial European Search Report dated Mar. 29, 2006, issued in corresponding European Application No. 05256204.8.
Korean Office Action dated Mar. 14, 2007, issued in corresponding Korean Application No. 10-2005-0096847. Yes.
Chinese Office Action dated Nov. 30, 2007, issued in corresponding Japanese Application No. 200510118486X.

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